类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR (ZBT) |
内存大小: | 18Mb (1M x 18) |
内存接口: | Parallel |
时钟频率: | 166 MHz |
写周期时间 - 字,页: | - |
访问时间: | 3.5 ns |
电压 - 电源: | 2.375V ~ 2.625V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 119-BGA |
供应商设备包: | 119-PBGA (14x22) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
93LC56BX-I/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8SOIC |
|
AS6C6264-55SINTRAlliance Memory, Inc. |
IC SRAM 64KBIT PARALLEL 28SOP |
|
CY7C1354C-200AXIRochester Electronics |
ZBT SRAM, 256KX36, 3.2NS PQFP100 |
|
AS29CF160T-55TINAlliance Memory, Inc. |
IC FLASH 16MBIT PAR 48TSOP I |
|
23K256T-I/STRoving Networks / Microchip Technology |
IC SRAM 256KBIT SPI 20MHZ 8TSSOP |
|
93C56T-E/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8SOIC |
|
24LC01BH-I/PRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 400KHZ 8DIP |
|
GD25VE40CSIGGigaDevice |
IC FLASH 4MBIT SPI/QUAD I/O 8SOP |
|
AT45DB161E-SSHD2B-TAdesto Technologies |
IC FLASH 16MBIT SPI 85MHZ 8SOIC |
|
25LC080AT-I/SNRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 10MHZ 8SOIC |
|
GD25Q20CSIGRGigaDevice |
IC FLASH 2MBIT SPI/QUAD I/O 8SOP |
|
S29GL01GS11FHB020Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 64FBGA |
|
BR25G128FVT-3GE2ROHM Semiconductor |
IC EEPROM 128KBIT SPI 8TSSOPB |