类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH |
内存大小: | 2Mb (256K x 8) |
内存接口: | SPI |
时钟频率: | 70 MHz |
写周期时间 - 字,页: | 8µs, 2.5ms |
访问时间: | - |
电压 - 电源: | 1.65V ~ 4.4V |
工作温度: | -40°C ~ 85°C (TC) |
安装类型: | Surface Mount |
包/箱: | 8-TSSOP (0.173", 4.40mm Width) |
供应商设备包: | 8-TSSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
GS8342D36BGD-300IGSI Technology |
IC SRAM 36MBIT PARALLEL 165FPBGA |
|
7142SA55CBRenesas Electronics America |
IC SRAM 16KBIT PARALLEL SB48 |
|
AS4C256M16D3C-10BCNAlliance Memory, Inc. |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
IS26KS128S-DPBLI00ISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 128MBIT PAR 24VFBGA |
|
AS6C2016-55ZINTRAlliance Memory, Inc. |
IC SRAM 2MBIT PARALLEL 44TSOP II |
|
AS4C512M16D3L-12BCNAlliance Memory, Inc. |
IC DRAM 8GBIT PARALLEL 96FBGA |
|
IS66WVE4M16EALL-70BLIISSI (Integrated Silicon Solution, Inc.) |
IC PSRAM 64MBIT PARALLEL 48TFBGA |
|
S29GL01GS11DHAV23Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 64FBGA |
|
UPD46184184BF1-E40-EQ1-ARochester Electronics |
DDR SRAM, 1MX18, 0.45NS |
|
AT28C256E-15SURoving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28SOIC |
|
S29CL016J0MQFM030Cypress Semiconductor |
IC FLASH 16MBIT PARALLEL 80PQFP |
|
SST26VF032-80-5I-S2AERoving Networks / Microchip Technology |
IC FLASH 32MBIT SPI/QUAD 8SOIC |
|
24AA64FT-I/MSRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 8MSOP |