类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 2Kb (256 x 8) |
内存接口: | SPI |
时钟频率: | 2 MHz |
写周期时间 - 字,页: | 2ms |
访问时间: | - |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-TSSOP (0.173", 4.40mm Width) |
供应商设备包: | 8-TSSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CAT24C04YI-GRochester Electronics |
IC EEPROM 4KBIT I2C 8TSSOP |
|
NM27C020T200Rochester Electronics |
OTP ROM, 256KX8, 200NS PDSO32 |
|
11LC160-I/PRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SGL WIRE 8DIP |
|
W9864G6KH-6 TRWinbond Electronics Corporation |
IC DRAM 64MBIT PAR 54TSOP II |
|
93LC56A/PRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8DIP |
|
MT53E768M32D4DT-053 AIT:EMicron Technology |
IC DRAM 24GBIT 1.866GHZ 200VFBGA |
|
MX25R8035FM2IH0Macronix |
IC FLASH 8MBIT SPI/QUAD I/O 8SOP |
|
CY62128DV30LL-55ZXIRochester Electronics |
STANDARD SRAM, 128KX8 |
|
IS61LP6436A-133TQLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 2MBIT PARALLEL 100TQFP |
|
CY62127DV30LL-70BVIRochester Electronics |
STANDARD SRAM, 64KX16, 70NS |
|
GVT71256G18T-6Rochester Electronics |
IC SRAM 4.5MBIT 117MHZ |
|
93LC76B-E/SNRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 3MHZ 8SOIC |
|
DS1245W-100Rochester Electronics |
IC NVSRAM 1MBIT PARALLEL 32EDIP |