类型 | 描述 |
---|---|
系列: | MXSMIO™ |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 8Mb (1M x 8) |
内存接口: | SPI - Quad I/O |
时钟频率: | 80 MHz |
写周期时间 - 字,页: | 30µs, 3ms |
访问时间: | - |
电压 - 电源: | 1.65V ~ 2V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-WDFN Exposed Pad |
供应商设备包: | 8-WSON (6x5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BR24G04F-3GTE2ROHM Semiconductor |
IC EEPROM 4KBIT I2C 400KHZ 8SOP |
|
W94AD6KBHX5I TRWinbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 60VFBGA |
|
CAT24C64HU4I-GT3Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 64KBIT I2C 1MHZ 8UDFN |
|
24AA512-I/PRoving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 8DIP |
|
IS46R16320E-6TLA2-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 66TSOP II |
|
AT24MAC402-XHM-TRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 1MHZ 8TSSOP |
|
CY7C1041BN-15VXCRochester Electronics |
STANDARD SRAM, 256KX16, 15NS |
|
CY62126EV30LL-45ZSXATCypress Semiconductor |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
AS4C32M16MD1A-5BCNAlliance Memory, Inc. |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
MX25V8035FZUIMacronix |
IC FLASH 8MBIT SPI 104MHZ 8USON |
|
MR1A16AYS35Everspin Technologies, Inc. |
IC RAM 2MBIT PARALLEL 44TSOP2 |
|
IS43R16320E-6TLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 66TSOP II |
|
70V631S10PRFGRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 128TQFP |