类型 | 描述 |
---|---|
系列: | GL-S |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 256Mb (16M x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 60ns |
访问时间: | 110 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 105°C (TA) |
安装类型: | Surface Mount |
包/箱: | 56-TFSOP (0.724", 18.40mm Width) |
供应商设备包: | 56-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS25LP128F-JLLE-TRISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 128MBIT SPI/QUAD 8WSON |
|
CY7C1399BN-15VXCRochester Electronics |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
MX25V2033FM1IMacronix |
IC FLASH 2MBIT SPI/QUAD I/O 8SOP |
|
AT27C020-55JU-TRoving Networks / Microchip Technology |
IC EPROM 2MBIT PARALLEL 32PLCC |
|
11LC161T-E/MSRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SGL WIRE 8MSOP |
|
11LC160-E/PRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SGL WIRE 8DIP |
|
CY7C1327A-133ACRochester Electronics |
STANDARD SRAM, 256KX18 |
|
IS61WV102416ALL-20MLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 16MBIT PAR 48MINIBGA |
|
CY62126EV18LL-70BVXIRochester Electronics |
IC SRAM 1MBIT PARALLEL 48VFBGA |
|
FT24C32A-UDR-BFremont Micro Devices |
IC EEPROM 32KBIT I2C 800KHZ 8DIP |
|
AT34C04-X5M-TRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 1MHZ 8TSSOP |
|
DS1345WP-100INDRochester Electronics |
IC NVSRAM 1MBIT PAR 34PWRCAP |
|
71V35761S183PFIRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |