English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | MoBL® |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 1Mb (64K x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 70ns |
| 访问时间: | 70 ns |
| 电压 - 电源: | 1.65V ~ 1.95V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 48-VFBGA |
| 供应商设备包: | 48-VFBGA (6x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FT24C32A-UDR-BFremont Micro Devices |
IC EEPROM 32KBIT I2C 800KHZ 8DIP |
|
AT34C04-X5M-TRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 1MHZ 8TSSOP |
|
DS1345WP-100INDRochester Electronics |
IC NVSRAM 1MBIT PAR 34PWRCAP |
|
71V35761S183PFIRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
W9825G2JB-75 TRWinbond Electronics Corporation |
IC DRAM 256MBIT PARALLEL 90TFBGA |
|
70T3399S133BFI8Renesas Electronics America |
IC SRAM 2MBIT PARALLEL 208CABGA |
|
AT25SF161B-SHB-BAdesto Technologies |
IC FLASH 16MBIT SPI/QUAD 8SOIC |
|
AT28HC256-12JURoving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 32PLCC |
|
AS7C31026B-20TCNAlliance Memory, Inc. |
IC SRAM 1MBIT PARALLEL 44TSOP2 |
|
MT58L256V36PT-7.5Rochester Electronics |
CACHE SRAM, 256KX36, 4NS PQFP100 |
|
CY7S1041G30-10ZSXIRochester Electronics |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
BR24G512FJ-3AGTE2ROHM Semiconductor |
IC EEPROM 512KBIT I2C 1MHZ 8SOPJ |
|
70V7519S166BF8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 208CABGA |
