类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q100, GL-N |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 512Mb (64M x 8, 32M x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 100ns |
访问时间: | 100 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 64-LBGA |
供应商设备包: | 64-FBGA (13x11) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
25AA02E48T-I/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 10MHZ 8SOIC |
|
S25FS512SDSNFV010Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 8WSON |
|
IS61LPS12836EC-200TQLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4.5MBIT PARALLEL 100LQFP |
|
CY14B101J2-SXICypress Semiconductor |
IC NVSRAM 1MBIT I2C 3.4MHZ 8SOIC |
|
IS45S32200L-7TLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PAR 86TSOP II |
|
M95320-WDW6TPSTMicroelectronics |
IC EEPROM 32KBIT SPI 8TSSOP |
|
CY7C263-55QMBRochester Electronics |
UVPROM, 8KX8, 55NS, CMOS, CQCC28 |
|
MT55L256L18P1F-10Rochester Electronics |
ZBT SRAM, 256KX18, 5NS PBGA165 |
|
IS42VM32160D-6BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 90TFBGA |
|
47L16-E/PRoving Networks / Microchip Technology |
IC EERAM 16KBIT I2C 1MHZ 8DIP |
|
AS7C31026B-20JCNTRAlliance Memory, Inc. |
IC SRAM 1MBIT PARALLEL 44SOJ |
|
RM25C128DS-LSNI-TAdesto Technologies |
IC CBRAM 128KBIT SPI 20MHZ 8SOIC |
|
W25Q40CLSNIGWinbond Electronics Corporation |
IC FLASH 4MBIT SPI 104MHZ 8SOIC |