English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 256Kb (32K x 8) |
| 内存接口: | I²C |
| 时钟频率: | 400 kHz |
| 写周期时间 - 字，页: | 5ms |
| 访问时间: | 900 ns |
| 电压 - 电源: | 2.5V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.209", 5.30mm Width) |
| 供应商设备包: | 8-SOIJ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CY7C1418KV18-250BZCTCypress Semiconductor |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
71V67703S85BG8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
CY27C256A-200QMBRochester Electronics |
UVPROM, 32KX8, 200NS CQCC32 |
|
AS4C256M8D3LC-12BCNAlliance Memory, Inc. |
IC DRAM 2GBIT PARALLEL 78FBGA |
|
M48Z58Y-70MH1FSTMicroelectronics |
IC NVSRAM 64KBIT PARALLEL 28SOH |
|
IS62WV12816BLL-55B2LIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 2MBIT PARALLEL 48MINIBGA |
|
IS43TR16128BL-125KBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 96TWBGA |
|
S25FL127SABBHVD00Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 24BGA |
|
CY7C1464AV33-167BGIRochester Electronics |
IC SRAM 36MBIT PARALLEL 209FBGA |
|
AT25DF256-SSHNGU-BAdesto Technologies |
IC FLASH 256KBIT SPI 8SOIC |
|
MT41K256M16TW-107 XIT:PMicron Technology |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
IS43TR16128DL-125KBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 96TWBGA |
|
24C01C-E/SNRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 100KHZ 8SOIC |
