English
简体中文
CAP CER 2200PF 100V C0G/NP0 1812
CAP CER 680PF 250V C0G/NP0 2225
CAP CER 150PF 200V C0G/NP0 0805
IC DRAM 4GBIT PARALLEL 96FBGA
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - DDR3L |
| 内存大小: | 4Gb (256M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | 933 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 20 ns |
| 电压 - 电源: | 1.283V ~ 1.45V |
| 工作温度: | -40°C ~ 95°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 96-TFBGA |
| 供应商设备包: | 96-FBGA (8x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IS43TR16128DL-125KBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 96TWBGA |
|
24C01C-E/SNRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 100KHZ 8SOIC |
|
S25FS512SAGBHV210Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 24BGA |
|
S25FL128SAGMFB003Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 16SOIC |
|
24LC512T-E/SNRoving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 8SOIC |
|
IS25LQ025B-JNLEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 256KBIT SPI/QUAD 8SOIC |
|
IS42VM32160D-75BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 90TFBGA |
|
GS8128436GB-250IGSI Technology |
IC SRAM 144MBIT PAR 119FPBGA |
|
24AA044-E/MSRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 1MHZ 8MSOP |
|
IS61C25616AL-10TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
S29GL256S90FHSS53Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
93AA56BT-I/MNYRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8TDFN |
|
CY15B004J-SXATCypress Semiconductor |
IC FRAM 4KBIT I2C 1MHZ 8SOIC |