English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 512Kb (64K x 8) |
| 内存接口: | I²C |
| 时钟频率: | 1 MHz |
| 写周期时间 - 字，页: | 5ms |
| 访问时间: | 900 ns |
| 电压 - 电源: | 1.8V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-TSSOP (0.173", 4.40mm Width) |
| 供应商设备包: | 8-TSSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CY7C1460KV25-167AXCCypress Semiconductor |
IC SRAM 36MBIT PARALLEL 100TQFP |
|
71V65603S100BQGIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
24AA02E64T-E/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8SOIC |
|
DS28E05P+Maxim Integrated |
IC EEPROM 896B 1-WIRE 6TSOC |
|
GT28F320C3TA100SB93 |
IC FLASH 32MBIT PAR 48UBGA CSP |
|
IS43R16160F-5BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 60TFBGA |
|
CAT25C16SIRochester Electronics |
IC EEPROM 16KBIT SPI 10MHZ 8SOIC |
|
AT25SF081B-SHB-BAdesto Technologies |
IC FLASH 8MBIT SPI QUAD 8SOIC |
|
AT28LV010-20TU-630Roving Networks / Microchip Technology |
IC EEPROM 1MBIT PARALLEL 32TSOP |
|
S25FL256SAGMFAG00Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 16SOIC |
|
S34MS04G200BHI000Rochester Electronics |
IC FLASH 4GBIT PARALLEL 63BGA |
|
IS46TR16128D-125KBLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 96TWBGA |
|
CAT24C208WI-GRochester Electronics |
IC EEPROM 8KBIT I2C 400KHZ 8SOIC |
