类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Synchronous |
内存大小: | 1.152Mb (64K x 18) |
内存接口: | Parallel |
时钟频率: | 133 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 3.135V ~ 3.465V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 144-LFBGA |
供应商设备包: | 144-FBGA (13x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MX25R2035FBDIL0Macronix |
IC FLASH 2MBIT SPI/QUAD 8WLCSP |
|
MR4A16BYS35Everspin Technologies, Inc. |
IC RAM 16MBIT PARALLEL 54TSOP2 |
|
AT45DB321E-SHF2B-TAdesto Technologies |
IC FLASH 32MBIT SPI 85MHZ 8SOIC |
|
S29GL01GP12FAI010Flip Electronics |
IC FLASH 1GBIT PARALLEL 64FBGA |
|
MX25LM51245GXDI00Macronix |
IC FLASH 512MBIT SPI/QUAD 24BGA |
|
SFEM016GB1EA1TO-I-LF-12P-STDSwissbit |
IC FLASH 128GBIT EMMC 153BGA |
|
GD25LQ128DWIGRGigaDevice |
IC FLASH 128MBIT SPI/QUAD 8WSON |
|
S29GL512T10TFA010Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 56TSOP |
|
IS49RL36160-093BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 576MBIT PAR 168FCBGA |
|
24AA16-I/STRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 8TSSOP |
|
CAT24C01LI-GRochester Electronics |
IC EEPROM 1KBIT I2C 400KHZ 8DIP |
|
IS61WV25616EDBLL-8TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
MX68GL1G0FHT2I-11GMacronix |
IC FLASH 1GBIT PARALLEL 56TSOP |