English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | MXSMIO™ |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NOR |
| 内存大小: | 512Mb (64M x 8) |
| 内存接口: | SPI - Quad I/O, DTR |
| 时钟频率: | 133 MHz |
| 写周期时间 - 字，页: | 750µs |
| 访问时间: | - |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 24-TBGA |
| 供应商设备包: | 24-BGA (6x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SFEM016GB1EA1TO-I-LF-12P-STDSwissbit |
IC FLASH 128GBIT EMMC 153BGA |
|
GD25LQ128DWIGRGigaDevice |
IC FLASH 128MBIT SPI/QUAD 8WSON |
|
S29GL512T10TFA010Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 56TSOP |
|
IS49RL36160-093BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 576MBIT PAR 168FCBGA |
|
24AA16-I/STRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 8TSSOP |
|
CAT24C01LI-GRochester Electronics |
IC EEPROM 1KBIT I2C 400KHZ 8DIP |
|
IS61WV25616EDBLL-8TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
MX68GL1G0FHT2I-11GMacronix |
IC FLASH 1GBIT PARALLEL 56TSOP |
|
71V124SA10PHGRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 32TSOP II |
|
S26KL256SDABHN030Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 24FBGA |
|
IS61C256AL-12JLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
BU9833GUL-WE2ROHM Semiconductor |
IC EEPROM 2KBIT I2C VCSP50L1 |
|
EDB8132B4PB-8D-F-DMicron Technology |
IC DRAM 8GBIT PARALLEL 168FBGA |
