类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 256Kb (32K x 8) |
内存接口: | SPI |
时钟频率: | 10 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | - |
电压 - 电源: | 2.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY62148DV30L-70SXIRochester Electronics |
STANDARD SRAM, 512KX8, 70NS |
|
CY62158DV30LL-55BVXITRochester Electronics |
STANDARD SRAM, 1MX8, 55NS |
|
CAT24C04WE-GT3Rochester Electronics |
IC EEPROM 4KBIT I2C 400KHZ 8SOIC |
|
CY7C1361KVE33-133AXMCypress Semiconductor |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
BR24L64F-WE2ROHM Semiconductor |
IC EEPROM 64KBIT I2C 400KHZ 8SOP |
|
CY7C1143KV18-400BZIRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
SST39LF401C-55-4C-B3KERoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 48TFBGA |
|
EM6HC08EWUG-10IHEtron Technology |
IC DRAM 1GBIT PARALLEL 78FBGA |
|
AS7C31025B-20JCNTRAlliance Memory, Inc. |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
GD25Q40CTIGRGigaDevice |
IC FLASH 4MBIT SPI/QUAD I/O 8SOP |
|
BR93C46-10TU-1.8ROHM Semiconductor |
IC EEPROM 1KBIT SPI 2MHZ 8TSSOP |
|
24AA01HT-I/LTRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C SC70-5 |
|
34LC02-E/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 1MHZ 8SOIC |