English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 1Mb (128K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 20ns |
| 访问时间: | 20 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 32-BSOJ (0.400", 10.16mm Width) |
| 供应商设备包: | 32-SOJ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
GD25Q40CTIGRGigaDevice |
IC FLASH 4MBIT SPI/QUAD I/O 8SOP |
|
BR93C46-10TU-1.8ROHM Semiconductor |
IC EEPROM 1KBIT SPI 2MHZ 8TSSOP |
|
24AA01HT-I/LTRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C SC70-5 |
|
34LC02-E/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 1MHZ 8SOIC |
|
93C06E/SNRochester Electronics |
256 BIT 5.0V SERIAL EEPROM |
|
CY7C11701KV18-400BZXCRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
7164S70DBRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 28CERDIP |
|
71V65803S133PFG8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
CY7C1380BV25-200ACRochester Electronics |
CACHE SRAM, 512KX36, 3NS |
|
W979H6KBVX2EWinbond Electronics Corporation |
IC DRAM 512MBIT PAR 134VFBGA |
|
R1LP5256ESP-5SR#S0Rochester Electronics |
IC SRAM 256KBIT PARALLEL 28SOP |
|
7132LA20JGRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 52PLCC |
|
MT58L128L36P1T-7.5ITRochester Electronics |
CACHE SRAM, 128KX36, 4NS PQFP100 |
