类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 1Kb (128 x 8) |
内存接口: | I²C |
时钟频率: | 1 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | 400 ns |
电压 - 电源: | 2.5V ~ 5.5V |
工作温度: | -40°C ~ 125°C (TA) |
安装类型: | Through Hole |
包/箱: | 8-DIP (0.300", 7.62mm) |
供应商设备包: | 8-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CAT24M01YI-GT3Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 1MBIT I2C 1MHZ 8TSSOP |
|
SST25VF016B-50-4C-S2AF-TRoving Networks / Microchip Technology |
IC FLASH 16MBIT SPI 50MHZ 8SOIC |
|
71V3557S85PFGRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
IS46DR16128C-3DBLA2-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 84TWBGA |
|
24C02CT/STRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 8TSSOP |
|
CY7C1625KV18-250BZXCRochester Electronics |
IC SRAM 144MBIT PARALLEL 165FBGA |
|
AS4C4M16SA-7TCNAlliance Memory, Inc. |
IC DRAM 64MBIT PAR 54TSOP II |
|
MT25QU256ABA8E12-1SIT TRMicron Technology |
IC FLASH 256MBIT SPI 24TPBGA |
|
AT28C256-15JURoving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 32PLCC |
|
RM24C32DS-LSNI-TAdesto Technologies |
IC CBRAM 32KBIT I2C 1MHZ 8SOIC |
|
S29GL128P10FFIS10ARochester Electronics |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
71V416L15BERenesas Electronics America |
IC SRAM 4MBIT PARALLEL 48CABGA |
|
AS7C256A-20TCNTRAlliance Memory, Inc. |
IC SRAM 256KBIT PAR 28TSOP I |