English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Not For New Designs |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 2Kb (256 x 8) |
| 内存接口: | SPI |
| 时钟频率: | 3 MHz |
| 写周期时间 - 字，页: | 5ms |
| 访问时间: | - |
| 电压 - 电源: | 2.7V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
| 供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
70V7599S166BF8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 208CABGA |
|
AS4C64M16D3B-12BCNTRAlliance Memory, Inc. |
IC DRAM 1GBIT PARALLEL 96FBGA |
|
25AA640A-I/STRoving Networks / Microchip Technology |
IC EEPROM 64KBIT SPI 8TSSOP |
|
93C66B-I/MSRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8MSOP |
|
S25FL256SAGNFI013Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 8WSON |
|
CAT24C512YE-GT3Rochester Electronics |
EEPROM, 64KX8, SERIAL, CMOS, PDS |
|
CY14B104N-BA45XCRochester Electronics |
IC NVSRAM 4MBIT PARALLEL 48FBGA |
|
IS42S32160F-7BL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 90TFBGA |
|
AT28C010-20UM/883Roving Networks / Microchip Technology |
IC EEPROM 1MBIT PARALLEL 30CPGA |
|
W25Q32JVSTIQ TRWinbond Electronics Corporation |
IC FLASH 32MBIT SPI/QUAD 8VSOP |
|
FEMC032GTTE7-T13-26Flexxon |
IC FLASH 256GBIT EMMC 100FBGA |
|
AS7C4098A-15TCNTRAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 44TSOP2 |
|
IS61NLP6432A-200TQLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 2MBIT PARALLEL 100TQFP |
