English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 1Mb (128K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 10ms |
| 访问时间: | 200 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | -55°C ~ 125°C (TC) |
| 安装类型: | Through Hole |
| 包/箱: | 30-BCPGA |
| 供应商设备包: | 30-CPGA (16.51x13.97) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
W25Q32JVSTIQ TRWinbond Electronics Corporation |
IC FLASH 32MBIT SPI/QUAD 8VSOP |
|
FEMC032GTTE7-T13-26Flexxon |
IC FLASH 256GBIT EMMC 100FBGA |
|
AS7C4098A-15TCNTRAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 44TSOP2 |
|
IS61NLP6432A-200TQLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 2MBIT PARALLEL 100TQFP |
|
M93C46-RMN3TP/KSTMicroelectronics |
IC EEPROM 1KBIT SPI 2MHZ 8SO |
|
BR93G56FVJ-3AGTE2ROHM Semiconductor |
IC EEPROM 2K SPI 3MHZ 8TSSOP |
|
W631GG8MB15I TRWinbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 78VFBGA |
|
MT58L256L36PT-6Rochester Electronics |
IC SRAM 8MBIT PARALLEL 100TQFP |
|
GD25D10CTIGGigaDevice |
IC FLASH 1MBIT SPI/DUAL I/O 8SOP |
|
IS61QDB44M18A-300M3LISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 72MBIT PARALLEL 165LFBGA |
|
STK14D88-NF25IRochester Electronics |
NON-VOLATILE SRAM, 32KX8, 25NS P |
|
S29GL064S80TFV010Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 56TSOP |
|
GD25LQ64CSIGGigaDevice |
IC FLASH 64MBIT SPI/QUAD 8SOP |
