类型 | 描述 |
---|---|
系列: | GL-T |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 512Mb (64M x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 60ns |
访问时间: | 110 ns |
电压 - 电源: | 1.65V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 64-LBGA |
供应商设备包: | 64-FBGA (13x11) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
W29GL512PL9TWinbond Electronics Corporation |
IC FLASH 512MBIT PARALLEL 56TSOP |
|
M24C16-DRMN3TP/KSTMicroelectronics |
IC EEPROM 16KBIT I2C 1MHZ 8SO |
|
IS43R86400F-5TLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 66TSOP II |
|
MX29F800CBTI-70GMacronix |
IC FLASH 8MBIT PARALLEL 48TSOP |
|
SST39VF1601-70-4I-EKERoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 48TSOP |
|
IS43LR32160B-6BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 90TFBGA |
|
CY7C1372D-167AXCRochester Electronics |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
AS7C31026B-12TCNAlliance Memory, Inc. |
IC SRAM 1MBIT PARALLEL 44TSOP2 |
|
71V67603S150BQGRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
CY7C1318CV18-250BZXCRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
AM27S07A/B2ARochester Electronics |
STANDARD SRAM, 16X4, 30NS |
|
CAT28C256NI15Rochester Electronics |
IC EEPROM 256KBIT PAR 32PLCC |
|
IS43TR16128C-15HBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 96TWBGA |