类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 4Mb (512K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 12ns |
访问时间: | 12 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 44-TSOP (0.400", 10.16mm Width) |
供应商设备包: | 44-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY14B512Q2A-SXITCypress Semiconductor |
IC NVSRAM 512KBIT SPI 8SOIC |
|
24AA024HT-I/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8SOIC |
|
CY7B139-35JCRochester Electronics |
DUAL-PORT SRAM, 4KX9, 35NS, |
|
NDL26PFG-9MITInsignis Technology Corporation |
IC DRAM 2GBIT PARALLEL 96FBGA |
|
24LC04B-I/MSRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 400KHZ 8MSOP |
|
93AA66C-I/STRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 3MHZ 8TSSOP |
|
AT28C256E-20FM/883Roving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28FLATPK |
|
CY7C1414JV18-267BZCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
CY7C225A-30JIRochester Electronics |
OTP ROM, 512X8, CMOS, PQCC28 |
|
S25FL128SAGBHIT03Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 24BGA |
|
UPD44644362AF5-E40-FQ1Rochester Electronics |
72-MBIT DDR II SRAM |
|
IS25WP064A-RMLEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 64MBIT SPI/QUAD 16SOIC |
|
IS42S86400F-7TLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 54TSOP II |