类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 2Kb (128 x 16) |
内存接口: | SPI |
时钟频率: | 2 MHz |
写周期时间 - 字,页: | 6ms |
访问时间: | - |
电压 - 电源: | 2.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-TSSOP (0.173", 4.40mm Width) |
供应商设备包: | 8-TSSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT25SF161-SHD-BAdesto Technologies |
IC FLASH 16MBIT SPI 104MHZ 8SOIC |
|
71V3577S85BGG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
71V2546S100BGRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
34AA02-E/STRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 8TSSOP |
|
NM25C160EM8Rochester Electronics |
EEPROM, 2KX8, SERIAL, CMOS |
|
25LC128T-E/MFRoving Networks / Microchip Technology |
IC EEPROM 128KBIT SPI 10MHZ 8DFN |
|
SST25VF040B-50-4I-S2AERoving Networks / Microchip Technology |
IC FLASH 4MBIT SPI 50MHZ 8SOIC |
|
71V3557S85BGIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
FM28V100-TGCypress Semiconductor |
IC FRAM 1MBIT PARALLEL 32TSOP I |
|
IS42S32400F-6BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 90TFBGA |
|
FM24C08ULEM8Rochester Electronics |
IC EEPROM 8KBIT I2C 400KHZ 8SOIC |
|
UPD44645184AF5-E33-FQ1Rochester Electronics |
72-MB DDR II+ SRAM (2M X 36-BIT) |
|
AT28HC256F-90DM/883Roving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28CDIP |