English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | F-RAM™ |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | FRAM |
| 技术: | FRAM (Ferroelectric RAM) |
| 内存大小: | 1Mb (128K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 90ns |
| 访问时间: | 90 ns |
| 电压 - 电源: | 2V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 32-TFSOP (0.465", 11.80mm Width) |
| 供应商设备包: | 32-TSOP I |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IS42S32400F-6BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 90TFBGA |
|
FM24C08ULEM8Rochester Electronics |
IC EEPROM 8KBIT I2C 400KHZ 8SOIC |
|
UPD44645184AF5-E33-FQ1Rochester Electronics |
72-MB DDR II+ SRAM (2M X 36-BIT) |
|
AT28HC256F-90DM/883Roving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28CDIP |
|
FT24C16A-ESG-TFremont Micro Devices |
IC EEPROM 16KBIT I2C 1MHZ 8SOP |
|
CY7C1420JV18-300BZXCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
MT46H32M32LFB5-5 AIT:B TRMicron Technology |
IC DRAM 1GBIT PARALLEL 90VFBGA |
|
IS25WP032D-JBLEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 32MBIT SPI/QUAD 8SOIC |
|
SST25VF040B-50-4I-QAF-TRoving Networks / Microchip Technology |
IC FLASH 4MBIT SPI 50MHZ 8WSON |
|
71V2546S133BG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
S26KL128SDABHI020Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 24FBGA |
|
M24C04-RMC6TGSTMicroelectronics |
IC EEPROM 4KBIT I2C 400KHZ 8MLP |
|
IS43LR32640A-5BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 90WBGA |
