类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Asynchronous |
内存大小: | 8Kb (1K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 100ns |
访问时间: | 100 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -55°C ~ 125°C (TA) |
安装类型: | Through Hole |
包/箱: | 48-DIP (0.600", 15.24mm) |
供应商设备包: | 48-SIDE BRAZED |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AS7C3256A-15JINAlliance Memory, Inc. |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
AS7C34096A-20JINTRAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 36SOJ |
|
CY14B104N-ZS45XCRochester Electronics |
IC NVSRAM 4MBIT PAR 44TSOP II |
|
25AA010A-I/PRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 10MHZ 8DIP |
|
CY7C11481KV18-400BZCRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
S29GL512S12TFBV20Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 56TSOP |
|
MT49H16M18SJ-25:B TRMicron Technology |
IC DRAM 288MBIT PARALLEL 144FBGA |
|
DS1350YP-70Rochester Electronics |
IC NVSRAM 4MBIT PAR 34PWRCAP |
|
MT29F4G08ABAEAWP-IT:E TRMicron Technology |
IC FLASH 4GBIT PARALLEL 48TSOP I |
|
93LC86C-I/MSRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 3MHZ 8MSOP |
|
W94AD2KBJX5E TRWinbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 90VFBGA |
|
M24C64S-FCU6T/TSTMicroelectronics |
IC EEPROM 64KBIT I2C 1MHZ 4WLCSP |
|
IS62WV20488FBLL-45BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 16MBIT PARALLEL 48VFBGA |