English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 256Kb (64K x 4) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 25ns |
| 访问时间: | 25 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Through Hole |
| 包/箱: | 24-DIP (0.300", 7.62mm) |
| 供应商设备包: | 24-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
71V3579S85PFGRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
S29GL512S11FHI010Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64BGA |
|
AT28HC256E-90SURoving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28SOIC |
|
AT24CM01-SSHD-TRoving Networks / Microchip Technology |
IC EEPROM 1MBIT I2C 1MHZ 8SOIC |
|
S29PL127J60TFI130Flip Electronics |
IC FLASH 128MBIT PARALLEL 56TSOP |
|
IS42S16160J-6BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 54TFBGA |
|
CY7C1041GN30-10ZSXITCypress Semiconductor |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
MT29RZ4B4DZZMGWD-18I.80CMicron Technology |
IC FLASH RAM 4G PAR 162VFBGA |
|
IS64LV25616AL-12BLA3-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 48MINIBGA |
|
CY7C1041GE-10ZSXITCypress Semiconductor |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
71V3577S80BQ8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
S-25C020A0I-T8T1UABLIC U.S.A. Inc. |
IC EEPROM 2KBIT SPI 5MHZ 8TSSOP |
|
S25FL128LAGMFV010Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 8SOIC |
