类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR2 |
内存大小: | 2Gb (128M x 16) |
内存接口: | Parallel |
时钟频率: | 333 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 450 ps |
电压 - 电源: | 1.7V ~ 1.9V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 84-TFBGA |
供应商设备包: | 84-TWBGA (8x12.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
71V124SA10PHGI8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 32TSOP II |
|
CY62256NLL-70SNXIRochester Electronics |
STANDARD SRAM, 32KX8, 70NS |
|
FT24C256A-UDR-BFremont Micro Devices |
IC EEPROM 256KBIT I2C 1MHZ 8DIP |
|
CY7C09289V-12ACRochester Electronics |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
BR24S128FV-WE2ROHM Semiconductor |
IC EEPROM 128KBIT I2C 8SSOPB |
|
AT93C86A-10PU-1.8Roving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 2MHZ 8DIP |
|
CY7C1386D-167AXCTRochester Electronics |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
CAT24C16HU4I-GT3Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 16KBIT I2C 8UDFN |
|
71V3558S100PFG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
AF008GEC5A-2001EXATP Electronics, Inc. |
IC 8GBIT 153BGA |
|
SST26WF040BT-104I/NPRoving Networks / Microchip Technology |
IC FLASH 4MBIT SPI/QUAD 8USON |
|
M95080-RDW6TPSTMicroelectronics |
IC EEPROM 8KBIT SPI 20MHZ 8TSSOP |
|
S25FL256SDSBHI213Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 24BGA |