类型 | 描述 |
---|---|
系列: | FL-S |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 256Mb (32M x 8) |
内存接口: | SPI - Quad I/O |
时钟频率: | 80 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 24-TBGA |
供应商设备包: | 24-BGA (8x6) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AS4C256M8D3A-12BCNAlliance Memory, Inc. |
IC DRAM 2GBIT PARALLEL 78FBGA |
|
MX25L12845GMI-08GMacronix |
IC FLSH 128MBIT SPI 120MHZ 16SOP |
|
71V65603S133BQRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
93C56A-E/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8SOIC |
|
93AA46B-I/MSRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8MSOP |
|
NM27C010N200Rochester Electronics |
IC EPROM 1MBIT PARALLEL 32DIP |
|
IS42S16160G-7TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
UPD44647366AF5-E25X-FQ1Rochester Electronics |
STANDARD SRAM, 2MX36, 0.45NS |
|
CY7C1470BV25-167BZXCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
IS43LD32160A-25BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 134TFBGA |
|
7164S20YG8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 28SOJ |
|
CY7C150-15PCRochester Electronics |
CACHE SRAM, 1KX4, 15NS |
|
BR93G76FVM-3AGTTRROHM Semiconductor |
IC EEPROM 8K SPI 3MHZ 8MSOP |