English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 2Kb (256 x 8) |
| 内存接口: | SPI |
| 时钟频率: | 2 MHz |
| 写周期时间 - 字，页: | 2ms |
| 访问时间: | - |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | -40°C ~ 125°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
| 供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
93AA46B-I/MSRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8MSOP |
|
NM27C010N200Rochester Electronics |
IC EPROM 1MBIT PARALLEL 32DIP |
|
IS42S16160G-7TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
UPD44647366AF5-E25X-FQ1Rochester Electronics |
STANDARD SRAM, 2MX36, 0.45NS |
|
CY7C1470BV25-167BZXCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
IS43LD32160A-25BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 134TFBGA |
|
7164S20YG8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 28SOJ |
|
CY7C150-15PCRochester Electronics |
CACHE SRAM, 1KX4, 15NS |
|
BR93G76FVM-3AGTTRROHM Semiconductor |
IC EEPROM 8K SPI 3MHZ 8MSOP |
|
71V424L15YRochester Electronics |
IC SRAM 4MBIT PARALLEL 36SOJ |
|
AS6C4008A-55STINAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 32STSOP |
|
CY7C1399BL-15ZXCRochester Electronics |
CACHE SRAM, 32KX8, 15NS PDSO28 |
|
CY7C1011CV33-10ZCTRochester Electronics |
STANDARD SRAM, 128KX16 |
