类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 2Mb (128K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 10ns |
访问时间: | 10 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 32-SOIC (0.400", 10.16mm Width) |
供应商设备包: | 32-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BQ4010MA-70Rochester Electronics |
IC NVSRAM 64KBIT PARALLEL 28DIP |
|
DS1250Y-70Rochester Electronics |
IC NVSRAM 4MBIT PARALLEL 32EDIP |
|
S-24C16DI-I8T1U5ABLIC U.S.A. Inc. |
IC EEPROM 16KBIT I2C 1MHZ SNT8A |
|
25LC080C-E/MSRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 10MHZ 8MSOP |
|
CY62148GN30-45SXICypress Semiconductor |
IC SRAM 4MBIT PARALLEL 32TSOP II |
|
MT29F1T08EEHAFJ4-3ITFES:A TRMicron Technology |
IC FLASH 1TB PARALLEL 132VBGA |
|
70T633S12BCI8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 256CABGA |
|
24CW320T-I/OTRoving Networks / Microchip Technology |
IC EEPROM 32KBIT I2C SOT23-5 |
|
24LC512T-I/SNRoving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 8SOIC |
|
QS7025A-55JRochester Electronics |
MULTI-PORT SRAM, 8KX16, 55NS |
|
MX29LV800CBXEI-70GMacronix |
IC FLASH 8MBIT PARALLEL 48LFBGA |
|
IS61LPS51218A-200TQLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
MT48LC2M32B2B5-7 IT:G TRMicron Technology |
IC DRAM 64MBIT PARALLEL 90VFBGA |