English
简体中文
BOX ABS GRAY 8.66"L X 5.51"W
IC FLASH 4G PARALLEL 48TSOP I
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | - |
| 内存格式: | - |
| 技术: | - |
| 内存大小: | - |
| 内存接口: | - |
| 时钟频率: | - |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | - |
| 工作温度: | - |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
W971GG6KB25I TRWinbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 84WBGA |
|
MT47H128M8CF-3 IT:HMicron Technology |
IC DRAM 1GBIT PARALLEL 60FBGA |
|
U6264BS2K07LLG1Alliance Memory, Inc. |
IC SRAM 64KBIT PARALLEL 28SOP |
|
IS61LF12836A-7.5TQI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
MT29F256G08CMCABH2-12ITZ:A TRMicron Technology |
IC FLASH 256GBIT PAR 100TBGA |
|
IS43DR16160A-3DBIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 84TWBGA |
|
MT46V16M8P-6T:DTRMicron Technology |
IC DRAM 128MBIT PARALLEL 66TSOP |
|
MT53D384M32D2DS-053 XT:C TRMicron Technology |
IC DRAM 12GBIT 1866MHZ 200WFBGA |
|
IDT71V3559S85PFIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
AS4C16M32MS-6BINAlliance Memory, Inc. |
IC DRAM 512MBIT PARALLEL 90FBGA |
|
AT28BV64B-20PIRoving Networks / Microchip Technology |
IC EEPROM 64KBIT PARALLEL 28DIP |
|
AT28C256F-15JARoving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 32PLCC |
|
R1RP0408DGE-2PR#B1Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 36SOJ |