类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Asynchronous |
内存大小: | 8Kb (1K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 55ns |
访问时间: | 55 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 52-LCC (J-Lead) |
供应商设备包: | 52-PLCC (19.13x19.13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7C09349AV-12AXCTCypress Semiconductor |
IC SRAM 72KBIT PARALLEL 100TQFP |
|
CAT28LV65WI20Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 64KBIT PARALLEL 28SOIC |
|
IDT70V7319S133DDIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 144TQFP |
|
AT49BV160CT-70TIRoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 48TSOP |
|
IDT71V424L10YRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 36SOJ |
|
MT28EW01GABA1LJS-0SITMicron Technology |
IC FLASH 1GBIT PARALLEL 56TSOP |
|
CY14E256L-SZ25XCTCypress Semiconductor |
IC NVSRAM 256KBIT PAR 32SOIC |
|
MT29F16G08ABCCBH1-10Z:CMicron Technology |
IC FLASH 16GBIT PARALLEL 100VBGA |
|
IDT71T75602S200BGGI8Renesas Electronics America |
IC SRAM 18MBIT PARALLEL 119PBGA |
|
AT25160B-MAPDGV-ERoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 5MHZ 8UDFN |
|
CAT28C16AGI20Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 16KBIT PARALLEL 32PLCC |
|
M25PX80-VMP6TG0Y TRMicron Technology |
IC FLASH 8MBIT SPI 75MHZ 8VFQFPN |
|
N02L6181AB27ISanyo Semiconductor/ON Semiconductor |
IC SRAM 2MBIT PARALLEL 48BGA |