English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | EPROM |
| 技术: | EPROM - OTP |
| 内存大小: | 4Mb (512K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | - |
| 访问时间: | 90 ns |
| 电压 - 电源: | 3V ~ 3.6V, 4.5V ~ 5.5V |
| 工作温度: | 0°C ~ 70°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 32-TFSOP (0.488", 12.40mm Width) |
| 供应商设备包: | 32-VSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
W9751G6KB-25 TRWinbond Electronics Corporation |
IC DRAM 512MBIT PARALLEL 84WBGA |
|
IS45S16100C1-7TLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PAR 50TSOP II |
|
MT53E384M32D2DS-046 AAT:EMicron Technology |
IC DRAM 12GBIT 2.133GHZ 200WFBGA |
|
W25Q16DVUZIG TRWinbond Electronics Corporation |
IC FLASH 16MBIT SPI/QUAD 8USON |
|
AT25010N-10SCRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 3MHZ 8SOIC |
|
71V432S6PFGI8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
7005L20PF8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 64TQFP |
|
GD5F4GQ4RCYIGYGigaDevice |
IC FLASH 4GBIT SPI/QUAD 8WSON |
|
DS1258Y-100#Maxim Integrated |
IC NVSRAM 2MBIT PARALLEL 40EDIP |
|
AT25SF041-XMHD-TAdesto Technologies |
IC FLASH 4MBIT SPI 104MHZ 8TSSOP |
|
S29AL016J55FFA023Cypress Semiconductor |
IC FLASH 16MBIT PARALLEL 64FBGA |
|
AT28BV16-25PCRoving Networks / Microchip Technology |
IC EEPROM 16KBIT PARALLEL 24DIP |
|
AT24C256-10PI-1.8Roving Networks / Microchip Technology |
IC EEPROM 256KBIT I2C 8DIP |
