类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 64Kb (8K x 8) |
内存接口: | SPI |
时钟频率: | 3 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | - |
电压 - 电源: | 2.7V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 20-TSSOP (0.173", 4.40mm Width) |
供应商设备包: | 20-TSSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT27LV020A-90VCRoving Networks / Microchip Technology |
IC EPROM 2MBIT PARALLEL 32VSOP |
|
AT45D161-TCRoving Networks / Microchip Technology |
IC FLASH 16MBIT SPI 15MHZ 28TSOP |
|
CAT28LV64H13-25TSanyo Semiconductor/ON Semiconductor |
IC EEPROM 64KBIT PARALLEL 28TSOP |
|
IS61VF51236A-6.5B3-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
IS42S16800E-7TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 54TSOP II |
|
IS42S32400D-7B-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 90TFBGA |
|
AT27LV256A-70TIRoving Networks / Microchip Technology |
IC EPROM 256KBIT PARALLEL 28TSOP |
|
M29F400BB90N6Micron Technology |
IC FLASH 4MBIT PARALLEL 48TSOP |
|
IDT70825S35PF8Renesas Electronics America |
IC RAM 128KBIT PARALLEL 80TQFP |
|
M27C256B-15F1STMicroelectronics |
IC EPROM 256KBIT PARALLEL 28CDIP |
|
CY7C019-15ACCypress Semiconductor |
IC SRAM 1.152MBIT PAR 100TQFP |
|
MT48LC4M16A2P-6A AAT:JMicron Technology |
IC DRAM 64MBIT PAR 54TSOP II |
|
R1LV0108ESA-5SR#S0Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 32STSOP |