类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 32Kb (4K x 8) |
内存接口: | SPI |
时钟频率: | 20 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | - |
电压 - 电源: | 1.8V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-VDFN Exposed Pad |
供应商设备包: | 8-MAP (3x4.9) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IDT71024S20YI8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
70V9269S12PRF8/703Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 128TQFP |
|
SST39WF800A-90-4I-B3KE-TRoving Networks / Microchip Technology |
IC FLASH 8MBIT PARALLEL 48TFBGA |
|
M29W400DB70ZE6EMicron Technology |
IC FLASH 4MBIT PARALLEL 48TFBGA |
|
MT28F800B3WG-9 T TRMicron Technology |
IC FLASH 8MBIT PARALLEL 48TSOP I |
|
MT48LC4M32B2F5-7 IT:G TRMicron Technology |
IC DRAM 128MBIT PARALLEL 90VFBGA |
|
IS42S16800E-6TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 54TSOP II |
|
S99GL01GP11TFIR20Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 56TSOP |
|
IS49NLS18320-33BIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 576MBIT PAR 144FCBGA |
|
70V08S20PFRenesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
7025L45JRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 84PLCC |
|
AT34C02-10PC-2.7Roving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8DIP |
|
STK12C68-C35ICypress Semiconductor |
IC NVSRAM 64KBIT PARALLEL 28CDIP |