English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q100 |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - Mobile LPDDR4 |
| 内存大小: | 16Gb (512M x 32) |
| 内存接口: | - |
| 时钟频率: | 1.6 GHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | 1.1V |
| 工作温度: | -40°C ~ 95°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 200-WFBGA |
| 供应商设备包: | 200-WFBGA (10x14.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
23K640-E/SNVAORoving Networks / Microchip Technology |
IC SRAM 64KBIT SPI 20MHZ 8SOIC |
|
AT27LV256A-15JCRoving Networks / Microchip Technology |
IC EPROM 256KBIT PARALLEL 32PLCC |
|
AT49F001NT-70PIRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32DIP |
|
W25Q16DVZPIG TRWinbond Electronics Corporation |
IC FLASH 16MBIT SPI/QUAD 8WSON |
|
RM3004-XSNI-TAdesto Technologies |
IC EEPROM 64KBIT SPI 1MHZ 8SOIC |
|
MT29F4G08ABBDAHC:DMicron Technology |
IC FLASH 4GBIT PARALLEL 63VFBGA |
|
MT42L16M32D1AC-25 AAT:A TRMicron Technology |
IC DRAM 512MBIT PAR 134VFBGA |
|
R1LV0108ESA-5SI#S0Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 32STSOP |
|
71V35761S166BGGRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
AT27C010L-12PCRoving Networks / Microchip Technology |
IC EPROM 1MBIT PARALLEL 32DIP |
|
71342LA70J8Renesas Electronics America |
IC SRAM 32KBIT PARALLEL 52PLCC |
|
W25Q32FWSSIG TRWinbond Electronics Corporation |
IC FLASH 32MBIT SPI/QUAD 8SOIC |
|
IDT71V3557SA85BGGI8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
