类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR |
内存大小: | 18Mb (512K x 36) |
内存接口: | Parallel |
时钟频率: | 167 MHz |
写周期时间 - 字,页: | - |
访问时间: | 3.4 ns |
电压 - 电源: | 2.375V ~ 2.625V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-LQFP |
供应商设备包: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
M29W128GSL70ZS6EMicron Technology |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
M27W512-100N6STMicroelectronics |
IC EPROM 512KBIT PARALLEL 28TSOP |
|
AT28C64E-20PIRoving Networks / Microchip Technology |
IC EEPROM 64KBIT PARALLEL 28DIP |
|
MT29F64G08AFAAAWP-ITZ:AMicron Technology |
IC FLSH 64GBIT PARALLEL 48TSOP I |
|
70261L25PFRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 100TQFP |
|
IS61QDB22M18C-250M3ISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 36MBIT PARALLEL 165LFBGA |
|
MT48LC16M16A2P-7E IT:D TRMicron Technology |
IC DRAM 256MBIT PAR 54TSOP II |
|
MT46V64M8FN-6 IT:FMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
M28W320HSB70ZB6EMicron Technology |
IC FLASH 32MBIT PARALLEL 47TFBGA |
|
MT28EW512ABA1HPC-1SIT TRMicron Technology |
IC FLASH 512MBIT PARALLEL 64LBGA |
|
M27W256B-80F6STMicroelectronics |
IC EPROM 256KBIT PARALLEL 28CDIP |
|
USBF4100T-I/SNVAORoving Networks / Microchip Technology |
IC FLASH 4MBIT SPI 40MHZ 8SOIC |
|
IS45S16800E-7BLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 54TFBGA |