类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 4Mb (1M x 4) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 10ns |
访问时间: | 10 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 32-BSOJ (0.400", 10.16mm Width) |
供应商设备包: | 32-SOJ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
70V659S15DRRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 208PQFP |
|
AT45D021-TCRoving Networks / Microchip Technology |
IC FLASH 2MBIT SPI 10MHZ 28TSOP |
|
IDT71V67802S166PFRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
70V261L25PFI8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 100TQFP |
|
IS25WP032A-JBLE-TRISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 32MBIT SPI/QUAD 8SOIC |
|
AT24C04N-10SCRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 400KHZ 8SOIC |
|
IS45S16320B-7TLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 54TSOP II |
|
24FC128T-I/STRoving Networks / Microchip Technology |
IC EEPROM 128KBIT I2C 8TSSOP |
|
MT46V64M4TG-5B:G TRMicron Technology |
IC DRAM 256MBIT PARALLEL 66TSOP |
|
7024S20J8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 84PLCC |
|
S30MS512R25TFW010Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 48TSOP |
|
M24C04-WBN6STMicroelectronics |
IC EEPROM 4KBIT I2C 400KHZ 8DIP |
|
IDT71V2576YS150PFG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |