类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH |
内存大小: | 128Mb (8M x 8 x 2, 4M x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 110ns |
访问时间: | 110 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 64-TBGA |
供应商设备包: | 64-TBGA (10x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IDT71T75602S100PFGRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
IS43DR81280C-3DBI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 60TWBGA |
|
70V05L20PFI8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 64TQFP |
|
AT29LV040A-15JU-TRoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 32PLCC |
|
IDT71T75602S200PFGRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
M28W320FCT70N6F TRMicron Technology |
IC FLASH 32MBIT PARALLEL 48TSOP |
|
AT24C128C-XPD-TRoving Networks / Microchip Technology |
IC EEPROM 128KBIT I2C 8TSSOP |
|
NAND01GW3B2BZA6EMicron Technology |
IC FLASH 1GBIT PARALLEL 63VFBGA |
|
IS42S16400D-6BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PAR 60MINIBGA |
|
AT49BV002T-12JIRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32PLCC |
|
IDT71V3558SA100BQ8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
S34ML04G200TFI903SkyHigh Memory Limited |
IC FLASH 4G PARALLEL 48TSOP I |
|
AS4C2M32S-6TCNTRAlliance Memory, Inc. |
IC DRAM 64MBIT PAR 86TSOP II |