类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q100 |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 128Kb (16K x 8) |
内存接口: | I²C |
时钟频率: | 400 kHz |
写周期时间 - 字,页: | 5ms |
访问时间: | 900 ns |
电压 - 电源: | 2.5V ~ 5.5V |
工作温度: | -40°C ~ 125°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-TSSOP (0.173", 4.40mm Width) |
供应商设备包: | 8-TSSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NAND01GW3B2BZA6EMicron Technology |
IC FLASH 1GBIT PARALLEL 63VFBGA |
|
IS42S16400D-6BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PAR 60MINIBGA |
|
AT49BV002T-12JIRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32PLCC |
|
IDT71V3558SA100BQ8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
S34ML04G200TFI903SkyHigh Memory Limited |
IC FLASH 4G PARALLEL 48TSOP I |
|
AS4C2M32S-6TCNTRAlliance Memory, Inc. |
IC DRAM 64MBIT PAR 86TSOP II |
|
IDT71V3557SA75BG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
IDT71V416YS15PHI8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
70V3389S5PRF/PRenesas Electronics America |
IC SRAM 1.125MBIT PAR 128TQFP |
|
7034L20PFRenesas Electronics America |
IC SRAM 72KBIT PARALLEL 100TQFP |
|
AT93C56A-10TU-2.7-TRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8TSSOP |
|
AT25020B-XPD-TRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 5MHZ 8TSSOP |
|
MT53D512M32D2DS-046 AIT:D TRMicron Technology |
IC DRAM 16GBIT 2133MHZ 200WFBGA |