类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 1Kb (128 x 8, 64 x 16) |
内存接口: | SPI |
时钟频率: | 2 MHz |
写周期时间 - 字,页: | 10ms |
访问时间: | - |
电压 - 电源: | 2.7V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Through Hole |
包/箱: | 8-DIP (0.300", 7.62mm) |
供应商设备包: | 8-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7C1021B-15ZXCTCypress Semiconductor |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
MT48H8M32LFF5-10Micron Technology |
IC DRAM 256MBIT PARALLEL 90VFBGA |
|
MT28F008B5VG-8 BMicron Technology |
IC FLASH 8MBIT PARALLEL 40TSOP I |
|
AT25020AN-10SI-2.7-TRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 20MHZ 8SOIC |
|
AT93C57-10SCRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8SOIC |
|
MT29F1G08ABADAWP-ITE:DMicron Technology |
IC FLASH 1GBIT PARALLEL 48TSOP I |
|
PC28F128P33T85DMicron Technology |
IC FLASH 128MBIT PAR 64EASYBGA |
|
MT48LC32M8A2TG-7E L:DMicron Technology |
IC DRAM 256MBIT PAR 54TSOP II |
|
DS1265AB-70INDMaxim Integrated |
IC NVSRAM 8MBIT PARALLEL 36EDIP |
|
IS42RM16160D-7BL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 54TFBGA |
|
IDT71V3556S166BQGIRenesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
AT27C512R-70PIRoving Networks / Microchip Technology |
IC EPROM 512KBIT PARALLEL 28DIP |
|
AT24C512W1-10SI-1.8Roving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 20SOIC |