类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 2Kb (256 x 8) |
内存接口: | I²C |
时钟频率: | 400 kHz |
写周期时间 - 字,页: | 5ms |
访问时间: | 900 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Through Hole |
包/箱: | 8-DIP (0.300", 7.62mm) |
供应商设备包: | 8-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
RC28F512M29EWHAMicron Technology |
IC FLASH 512MBIT PARALLEL 64FBGA |
|
IS61LPS51236A-200B3I-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
25LC320A-E/ST16KVAORoving Networks / Microchip Technology |
IC EEPROM 32KBIT SPI 8TSSOP |
|
IS25LQ020B-JBLEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 2MBIT SPI/QUAD 8SOIC |
|
DS2704G+T&RMaxim Integrated |
IC EEPROM 1.25K 1-WIRE 6TDFN |
|
MT25QL128ABA1EW7-MSITMicron Technology |
IC FLASH 128MBIT SPI 8WPDFN |
|
AS4C256M8D3A-12BANAlliance Memory, Inc. |
IC DRAM 2GBIT PARALLEL 78FBGA |
|
MT48H16M32L2B5-10Micron Technology |
IC DRAM 512MBIT PARALLEL 90VFBGA |
|
R1LV0816ASB-5SI#B0Renesas Electronics America |
IC SRAM 8MBIT PARALLEL 44TSOP II |
|
MT46V32M8FG-75:G TRMicron Technology |
IC DRAM 256MBIT PARALLEL 60FBGA |
|
S30MS01GR25TFW000Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 48TSOP |
|
MT48LC32M8A2TG-7E:D TRMicron Technology |
IC DRAM 256MBIT PAR 54TSOP II |
|
AT93C66W-10SCRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8SOIC |