类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 4Kb (256 x 8 x 2) |
内存接口: | I²C |
时钟频率: | 1 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | 450 ns |
电压 - 电源: | 1.7V ~ 5.5V |
工作温度: | -40°C ~ 125°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
供应商设备包: | 8-MSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT27BV1024-12VIRoving Networks / Microchip Technology |
IC EPROM 1MBIT PARALLEL 40VSOP |
|
LE24CB642M-TLM-ESanyo Semiconductor/ON Semiconductor |
IC EEPROM 64KBIT I2C 400KHZ 8MFP |
|
AT49F001NT-90JCRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32PLCC |
|
IS41C16257C-35TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4MBIT PARALLEL 40TSOP |
|
AS4C256M16D3LA-12BINAlliance Memory, Inc. |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
709349L9PF8Renesas Electronics America |
IC SRAM 72KBIT PARALLEL 100TQFP |
|
AS4C32M16D1-5TCNTRAlliance Memory, Inc. |
IC DRAM 512MBIT PAR 66TSOP II |
|
S25FL116K0XMFIS11Cypress Semiconductor |
IC FLASH 16MBIT SPI/QUAD 8SOIC |
|
IDT71016S12PHGI8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
MX29LV800CTXEC-90GMacronix |
IC FLASH 8MBIT PARALLEL 48LFBGA |
|
AT29LV1024-20TIRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 48TSOP |
|
W19B320ATB7HWinbond Electronics Corporation |
IC FLASH 32MBIT PARALLEL 48TFBGA |
|
AT49F040-90PCRoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 32DIP |