类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Discontinued at Digi-Key |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM |
内存大小: | 64Mb (4M x 16) |
内存接口: | Parallel |
时钟频率: | 143 MHz |
写周期时间 - 字,页: | - |
访问时间: | 5.4 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 54-TSOP (0.400", 10.16mm Width) |
供应商设备包: | 54-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT28F004B5VG-8 TETMicron Technology |
IC FLASH 4MBIT PARALLEL 40TSOP I |
|
MT29F128G08CBCEBJ4-37ES:EMicron Technology |
IC FLASH 128GBIT PAR 132VBGA |
|
IS25LQ025B-JBLE-TRISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 256KBIT SPI/QUAD 8SOIC |
|
AT25DF041A-MHF-YAdesto Technologies |
IC FLASH 4MBIT SPI 50MHZ 8UDFN |
|
IDT71T75702S80BGRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 119PBGA |
|
CY7C1021BN-12VXITCypress Semiconductor |
IC SRAM 1MBIT PARALLEL 44SOJ |
|
DS1609S-50Maxim Integrated |
IC SRAM 2KBIT PARALLEL 24SOIC |
|
M29W800DT45ZE6EMicron Technology |
IC FLASH 8MBIT PARALLEL 48TFBGA |
|
NM27C256Q200Sanyo Semiconductor/ON Semiconductor |
IC EPROM 256KBIT PARALLEL 28CDIP |
|
M95512-RCS6TP/KSTMicroelectronics |
IC EEPROM 512KBIT SPI 8WLCSP |
|
AT27BV040-12VCRoving Networks / Microchip Technology |
IC EPROM 4MBIT PARALLEL 32VSOP |
|
AT93C46-10PC-2.5Roving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8DIP |
|
PF48F3000P0ZTQEAMicron Technology |
IC FLASH 128MBIT PARALLEL 88SCSP |