类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 8Mb (1M x 8, 512K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 45ns |
访问时间: | 45 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 48-TFBGA |
供应商设备包: | 48-TFBGA (6x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NM27C256Q200Sanyo Semiconductor/ON Semiconductor |
IC EPROM 256KBIT PARALLEL 28CDIP |
|
M95512-RCS6TP/KSTMicroelectronics |
IC EEPROM 512KBIT SPI 8WLCSP |
|
AT27BV040-12VCRoving Networks / Microchip Technology |
IC EPROM 4MBIT PARALLEL 32VSOP |
|
AT93C46-10PC-2.5Roving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8DIP |
|
PF48F3000P0ZTQEAMicron Technology |
IC FLASH 128MBIT PARALLEL 88SCSP |
|
AT27LV512A-12RIRoving Networks / Microchip Technology |
IC EPROM 512KBIT PARALLEL 28SOIC |
|
IS62C256-70UIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 256KBIT PARALLEL 28SOP |
|
R1LV0108ESA-5SR#B0Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 32STSOP |
|
DS1250AB-70INDMaxim Integrated |
IC NVSRAM 4MBIT PARALLEL 32EDIP |
|
M29F200BB45N1STMicroelectronics |
IC FLASH 2MBIT PARALLEL 48TSOP |
|
MT48LC4M32LFB5-10 IT:GMicron Technology |
IC DRAM 128MBIT PARALLEL 90VFBGA |
|
7130SA25PFRenesas Electronics America |
IC SRAM 8KBIT PARALLEL 64TQFP |
|
7038L15PFRenesas Electronics America |
IC SRAM 1.125MBIT PAR 100TQFP |