类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Asynchronous |
内存大小: | 8Kb (1K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 25ns |
访问时间: | 25 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 64-LQFP |
供应商设备包: | 64-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
7038L15PFRenesas Electronics America |
IC SRAM 1.125MBIT PAR 100TQFP |
|
MT41K512M8RH-125 XIT:EMicron Technology |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
SST39SF040-45-4C-NHE-TRoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 32PLCC |
|
IS25LQ512A-JNLEISSI (Integrated Silicon Solution, Inc.) |
IC FLSH 512KBIT SPI/QUAD 8SOIC |
|
M27W101-80N6TRSTMicroelectronics |
IC EPROM 1MBIT PARALLEL 32TSOP |
|
AT27BV010-90VCRoving Networks / Microchip Technology |
IC EPROM 1MBIT PARALLEL 32VSOP |
|
7026L55J8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 84PLCC |
|
IS61QDB22M36A-250M3IISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 72MBIT PARALLEL 165LFBGA |
|
AS4C128M16D3-12BANTRAlliance Memory, Inc. |
IC DRAM 2GBIT PARALLEL 96FBGA |
|
70V658S10DRRenesas Electronics America |
IC SRAM 2MBIT PARALLEL 208PQFP |
|
IS43DR16128A-3DBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 84LFBGA |
|
W632GU6NB12JWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 96VFBGA |
|
IDT71V67903S75PFRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |