类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 256Kb (32K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 20ns |
访问时间: | 20 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 28-BSOJ (0.300", 7.62mm Width) |
供应商设备包: | 28-SOJ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS42VM32800E-6BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 90TFBGA |
|
IDT70825L20PF8Renesas Electronics America |
IC RAM 128KBIT PARALLEL 80TQFP |
|
NM93CS46LM8Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 1KBIT SPI 250KHZ 8SO |
|
MT46V128M8P-6T IT:AMicron Technology |
IC DRAM 1GBIT PARALLEL 66TSOP |
|
CY7C025AV-20AXICypress Semiconductor |
IC SRAM 128KBIT PARALLEL 100TQFP |
|
CY7C025-25JXCTCypress Semiconductor |
IC SRAM 128KBIT PARALLEL 84PLCC |
|
MT28F128J3BS-12 ET TRMicron Technology |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
AT24C04AN-10SI-2.5Roving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 400KHZ 8SOIC |
|
MT53D384M32D2DS-046 AIT:C TRMicron Technology |
IC DRAM 12GBIT 2133MHZ 200WFBGA |
|
IS43R16800C-5TLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 66TSOP II |
|
PC28F128J3D75B TRMicron Technology |
IC FLASH 128MBIT PAR 64EASYBGA |
|
AT28BV64B-20JARoving Networks / Microchip Technology |
IC EEPROM 64KBIT PARALLEL 32PLCC |
|
M34C02-WMN6TSTMicroelectronics |
IC EEPROM 2KBIT I2C 400KHZ 8SO |