类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 4Mb (512K x 8, 256K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 70ns |
访问时间: | 70 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 125°C (TA) |
安装类型: | Surface Mount |
包/箱: | 48-TFSOP (0.724", 18.40mm Width) |
供应商设备包: | 48-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
M27C4002-10C1STMicroelectronics |
IC EPROM 4MBIT PARALLEL 44PLCC |
|
SST39LF020-45-4C-B3KERoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 48TFBGA |
|
NM93CS06LM8Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 256B SPI 250KHZ 8SO |
|
M25P32-VMW3GB TRMicron Technology |
IC FLASH 32MBIT SPI 75MHZ 8SO |
|
MT48LC8M32B2TG-7 IT TRMicron Technology |
IC DRAM 256MBIT PAR 86TSOP II |
|
DS1225AD-150INDMaxim Integrated |
IC NVSRAM 64KBIT PARALLEL 28EDIP |
|
IDT71V3557SA75BGG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
70121L25JRenesas Electronics America |
IC SRAM 18KBIT PARALLEL 52PLCC |
|
MT47H64M8CB-25:B TRMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
CY7C1420BV18-200BZCTCypress Semiconductor |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
CAT28C512GI-12TSanyo Semiconductor/ON Semiconductor |
IC EEPROM 512KBIT PAR 32PLCC |
|
25LC020AT-H/SN16KVAORoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 10MHZ 8SOIC |
|
AT28BV16-25SIRoving Networks / Microchip Technology |
IC EEPROM 16KBIT PARALLEL 24SOIC |