类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 1Mb (128K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 35ns |
访问时间: | 35 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 32-TFSOP (0.724", 18.40mm Width) |
供应商设备包: | 32-TSOP I |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT46V16M8P-75:D TRMicron Technology |
IC DRAM 128MBIT PARALLEL 66TSOP |
|
IS61QDB41M36-250M3ISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 36MBIT PARALLEL 165LFBGA |
|
IDT71V2576S133PFIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
AT45DB161D-MU-2.5Roving Networks / Microchip Technology |
IC FLASH 16MBIT SPI 50MHZ 8VDFN |
|
IDT71V2556S100PFI8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
MT29RZ2B2DZZHHTB-18W.88FMicron Technology |
IC FLASH RAM 2GBIT PAR 162VFBGA |
|
R1EX25004ATA00I#S0Renesas Electronics America |
IC EEPROM 4KBIT SPI 5MHZ 8TSSOP |
|
AT28C64E-20SIRoving Networks / Microchip Technology |
IC EEPROM 64KBIT PARALLEL 28SOIC |
|
IS61LV6416-12KL-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 44SOJ |
|
70261S55PF8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 100TQFP |
|
IS66WV25616BLL-55TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC PSRAM 4MBIT PAR 44TSOP II |
|
IDT71V67602S166BQI8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
IDT71V3578S133PFIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |