English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | GL-P |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NOR |
| 内存大小: | 128Mb (16M x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 110ns |
| 访问时间: | 110 ns |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 64-LBGA |
| 供应商设备包: | 64-FBGA (13x11) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
M29W400DT55ZE6F TRMicron Technology |
IC FLASH 4MBIT PARALLEL 48TFBGA |
|
MT46V256M4P-6T:A TRMicron Technology |
IC DRAM 1GBIT PARALLEL 66TSOP |
|
93LC66CT-E/SN15KVAORoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8SOIC |
|
MT48V8M16LFF4-8 IT:G TRMicron Technology |
IC DRAM 128MBIT PARALLEL 54VFBGA |
|
W25Q16DVTCIGWinbond Electronics Corporation |
IC FLASH 16MBIT SPI/QUAD 24TFBGA |
|
70V9279L15PRF8Renesas Electronics America |
IC SRAM 512KBIT PARALLEL 128TQFP |
|
IDT71V25761YSA200BGRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
AT45DB081-RIRoving Networks / Microchip Technology |
IC FLASH 8MBIT SPI 10MHZ 28SOIC |
|
N25Q064A13ESFA0F TRMicron Technology |
IC FLSH 64MBIT SPI 108MHZ 16SOP2 |
|
CAT25160VE-GT3CSanyo Semiconductor/ON Semiconductor |
IC EEPROM 16KB SER SPI 8SOIC |
|
IS25CQ032-JBLE-TRISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 32MBIT SPI 104MHZ 8SOIC |
|
CY14B104L-ZS45XCTCypress Semiconductor |
IC NVSRAM 4MBIT PAR 44TSOP II |
|
AT28HC256F-90SARoving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28SOIC |
