类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Last Time Buy |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 16Kb (2K x 8) |
内存接口: | SPI |
时钟频率: | 10 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | - |
电压 - 电源: | 2.5V ~ 5.5V |
工作温度: | -40°C ~ 125°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS25CQ032-JBLE-TRISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 32MBIT SPI 104MHZ 8SOIC |
|
CY14B104L-ZS45XCTCypress Semiconductor |
IC NVSRAM 4MBIT PAR 44TSOP II |
|
AT28HC256F-90SARoving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28SOIC |
|
IDT71V3556S150PFRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
CY62136VNLL-70ZSXETCypress Semiconductor |
IC SRAM 2MBIT PARALLEL 44TSOP II |
|
AS4C256M8D3-12BANAlliance Memory, Inc. |
IC DRAM 2GBIT PARALLEL 78FBGA |
|
IS43TR16256A-093NBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 96TWBGA |
|
W97BH6KBVX2IWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 134VFBGA |
|
AT49F512-70VCRoving Networks / Microchip Technology |
IC FLASH 512KBIT PARALLEL 32VSOP |
|
MT48H4M16LFB4-8 ITMicron Technology |
IC DRAM 64MBIT PARALLEL 54VFBGA |
|
MT48V4M32LFF5-8:GMicron Technology |
IC DRAM 128MBIT PARALLEL 90VFBGA |
|
IS42S16160D-75ETL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
7006S35PF8Renesas Electronics America |
IC SRAM 128KBIT PARALLEL 64TQFP |