English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Dual Port, Asynchronous |
| 内存大小: | 512Kb (32K x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 55ns |
| 访问时间: | 55 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 100-LQFP |
| 供应商设备包: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MT48V8M16LFB4-8 XT:GMicron Technology |
IC DRAM 128MBIT PARALLEL 54VFBGA |
|
IDT71V3558S133PFI8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
MT29F16G08ABCCBH1-10Z:C TRMicron Technology |
IC FLASH 16GBIT PARALLEL 100VBGA |
|
AT93C46C-10PC-2.7Roving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8DIP |
|
AT49BV160D-70TURoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 48TSOP |
|
70V09L15PFRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
MT48H8M32LFF5-10 TRMicron Technology |
IC DRAM 256MBIT PARALLEL 90VFBGA |
|
IS43DR16160A-3DBL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 84TWBGA |
|
X28HC256JIZ-90T1Intersil (Renesas Electronics America) |
IC EEPROM 256KBIT PAR 32PLCC |
|
MT47H32M16HW-25E:GMicron Technology |
IC DRAM 512MBIT PARALLEL 84FBGA |
|
MT29F1G16ABBEAMD-IT:EMicron Technology |
IC FLASH 1GBIT PARALLEL 130VFBGA |
|
IDT71V3556S166BQGRenesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
IS42VM16800G-75BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 54TFBGA |
