类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM |
内存大小: | 256Mb (8M x 32) |
内存接口: | Parallel |
时钟频率: | 133 MHz |
写周期时间 - 字,页: | - |
访问时间: | 5.5 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 90-TFBGA |
供应商设备包: | 90-TFBGA (8x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT28EW512ABA1LJS-0SITMicron Technology |
IC FLASH 512MBIT PARALLEL 56TSOP |
|
DS2431X+UMaxim Integrated |
IC EEPROM 1KBIT 1-WIRE 6UCSPR |
|
MT48LC4M16A2P-7E AIT:J TRMicron Technology |
IC DRAM 64MBIT PAR 54TSOP II |
|
CY7C1425AV18-300BZXCCypress Semiconductor |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
MT29F16G08ABACAWP-IT:C TRMicron Technology |
IC FLSH 16GBIT PARALLEL 48TSOP I |
|
SST39WF1601-90-4C-B3KERoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 48TFBGA |
|
IS43TR85120AL-15HBL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 78TWBGA |
|
70V9179L7PFG8Renesas Electronics America |
IC SRAM 288KBIT PARALLEL 100TQFP |
|
IS46TR16256AL-15HBLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 96TWBGA |
|
IS66WV1M16DBLL-55BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC PSRAM 16MBIT PAR 48MINIBGA |
|
MT48LC2M32B2P-7:GMicron Technology |
IC DRAM 64MBIT PAR 86TSOP II |
|
MT48LC2M32B2TG-5:GMicron Technology |
IC DRAM 64MBIT PAR 86TSOP II |
|
25LC320AT-E/SN16KVAORoving Networks / Microchip Technology |
IC EEPROM 32KBIT SPI 10MHZ 8SOIC |